Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. Keywords: anodization; crystallographically oriented pores; gallium arsenide (GaAs); nanowires; neutral electrolyte; photocurrent; porous GaAs; Introduction

• templating, anisotropic chemical etching, localized anodic etching, and isotropic anodic oxidation [15][16]. However, this is a complex multistep technology. A more simple and cost-effective technology was applied for obtaining triangular GaAs nanowires through electrochemical etching of GaAs(100) surfaces

• in aqueous KOH solution [17]. However, this process was difficult to control. The bundles of GaAs nanowires were formed only in some regions of the surface and the orientation of the arrays was basically random. Usually, acidic or alcaline electrolytes are used for the electrochemical preparation of

Cathodoluminescence as a probe of the optical properties of resonant apertures in a metallic film

• Kalpana Singh,
• Evgeniy Panchenko,
• Babak Nasr,
• Amelia Liu,
• Lukas Wesemann,
• Timothy J. Davis and
• Ann Roberts

Beilstein J. Nanotechnol. 2018, 9, 1491–1500, doi:10.3762/bjnano.9.140

• GaAs nanowires [46], modes of single and pairs of AlGaAs disks [47], the optical properties of quantum discs of GaN/AlN in GaN nanowires [48] and various modes of gold nanodecahedra [49]. The potential of CL used in transmission to observe various colour centres in nanodiamonds has also been

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• Abstract Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires

• the GaAs nanowires on their electronic structure; ii) a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111); iii) the occurrence of a higher WZ phase fraction, in particular for growth on Si(111); iv) an increase of the activation energy to release

• measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested. Keywords: electronic structure; field effect transistors; GaAs nanowires